Fast Insulated Gate Bipolar Transistors (IGBTs) from Advanced Power Electronics Corp. provide low conduction and switching losses. The AP30G120W-3 is designed for applications such as Induction Heaters and Micro Ovens where high speed switching is a required feature.
Features:
High speed switching
Low saturation voltage
Industry standard TO-3P package
RoHS compliant
http://www.globalspec.com/FeaturedProducts/Detail/AdvancedPowerElectronicsUSA/AP30G120W3_Insulated_Gate_Bipolar_Transistor/86545/0?fromSpotlight=1
Mostrando entradas con la etiqueta AP30G120W-3 Insulated Gate Bipolar Transistor. Mostrar todas las entradas
Mostrando entradas con la etiqueta AP30G120W-3 Insulated Gate Bipolar Transistor. Mostrar todas las entradas
miércoles, 28 de julio de 2010
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