Mostrando entradas con la etiqueta AP30G120W-3 Insulated Gate Bipolar Transistor. Mostrar todas las entradas
Mostrando entradas con la etiqueta AP30G120W-3 Insulated Gate Bipolar Transistor. Mostrar todas las entradas
miércoles, 28 de julio de 2010

AP30G120W-3 Insulated Gate Bipolar Transistor

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Fast Insulated Gate Bipolar Transistors (IGBTs) from Advanced Power Electronics Corp. provide low conduction and switching losses. The AP30G...